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参数资料
| 型号： | IRFEA240 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 11A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵| N沟道| 200伏五（巴西）直| 11A条（丁）| LLCC |
| 文件页数： | 2/7页 |
| 文件大小： | 243K |
| 代理商： | IRFEA240 |
IRFEA240
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
2.5
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
11
44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
470
6.5
V
nS
μ
C
T
j
= 25°C, IS = 11A, VGS = 0V
Tj = 25°C, IF = 11A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.25
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.18
VGS = 10V, ID = 11A
2.0
6.0
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS = 25V, IDS = 11A
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 11A
VDS = 100V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
84
17
41
25
196
80
130
—
nC
VDD = 100V, ID = 11A
RG = 9.1
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1340
434
134
—
—
—
pF
nA
nH
ns
μ
A
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