参数资料
型号: IRFEA240
英文描述: TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 11A I(D) | LLCC
中文描述: 晶体管| MOSFET的|阵| N沟道| 200伏五(巴西)直| 11A条(丁)| LLCC
文件页数: 4/7页
文件大小: 243K
代理商: IRFEA240
IRFEA240
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
V , Drain-to-Source Voltage (V)
C
C
V
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
20
Q , Total Gate Charge (nC)
40
60
80
100
0
4
8
12
16
20
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
11
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
0.2
0.7
1.2
1.7
2.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
A
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