参数资料
型号: IRFF320
元件分类: JFETs
英文描述: 2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封装: HERMETIC SEALED, TO-39, 3 PIN
文件页数: 1/7页
文件大小: 193K
代理商: IRFF320
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
2.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
1.25
IDM
Pulsed Drain Current
10
PD @ TC = 25°C
Max. Power Dissipation
20
W
Linear Derating Factor
0.16
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
0.242
mJ
IAR
Avalanche Current
2.2
A
EAR
Repetitive Avalanche Energy
2.0
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
0.98(typical)
g
The HEXFETtechnology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the Art”
design achieves: very low on-state resistance combined with
high transconductance.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of parelleling and temperature stability of the
electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
°C
A
08/07/07
www.irf.com
1
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
For footnotes refer to the last page
IRFF320
JANTX2N6792
JANTXV2N6792
REF:MIL-PRF-19500/555
400V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on)
ID
IRFF320
400V
1.8
2.0A
T0-39
PD -90428D
相关PDF资料
PDF描述
IRFI530G-031PBF 9.7 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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IRFI614G-004PBF 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFI720G-011 2.6 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFI720G-018PBF 2.6 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
IRFF320R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF
IRFF321 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFF321R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF
IRFF322 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFF322R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF