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参数资料
| 型号： | IRFF320 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | HERMETIC SEALED, TO-39, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 193K |
| 代理商： | IRFF320 |
IRFF320, JANTX2N6792, JANTXV2N6792
2
www.irf.com
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.37
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
1.8
VGS = 10V, ID = 1.25A
Resistance
—
1.9
VGS = 10V, ID = 2.0A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
1.0
—
VDS > 15V, IDS = 1.25A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS = 320V, VGS = 0V
—
250
A
VDS = 320V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
nA
VGS = -20V
Qg
Total Gate Charge
8.7
—
22
VGS = 10V, ID = 2.0A
Qgs
Gate-to-Source Charge
0.8
—
3.0
nC
VDS = 200V
Qgd
Gate-to-Drain (‘Miller’) Charge
4.2
—
14
td(on)
Turn-On Delay Time
—
40
VDD = 175V, ID = 2.0A
tr
Rise Time
—
35
VGS = 10V, RG = 7.5
td(off)
Turn-Off Delay Time
—
60
tf
Fall Time
—
35
LS + LD
Total Inductance
—
7.0
—
Ciss
Input Capacitance
—
350
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
100
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
45
—
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-DrainDiodeRatingsandCharacteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
2.0
ISM
Pulse Source Current (Body Diode)
——
10
VSD Diode Forward Voltage
—
1.4
V
Tj = 25°C, IS = 2.0A, VGS = 0V
trr
Reverse Recovery Time
—
650
ns
Tj = 25°C, IF = 2.0A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
5.0
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
6.25
RthJA
Junction-to-Ambient
—
175
Typical socket mount.
°C/W
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFF320R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF |
| IRFF321 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF321R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF |
| IRFF322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF322R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF |
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