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参数资料
| 型号： | IRFI9Z34N |
| 厂商： | International Rectifier |
| 英文描述： | P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) |
| 中文描述： | P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管） |
| 文件页数： | 2/8页 |
| 文件大小： | 120K |
| 代理商： | IRFI9Z34N |
IRFI9Z34N
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= - 7.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -10A
di/dt = -100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
54
110
-1.3
82
160
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
-55
–––
–––
-0.05 –––
–––
–––
-2.0
–––
4.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
–––
55
–––
30
–––
41
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= - 7.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 25V, I
D
= -10A
V
DS
= - 55V, V
GS
= 0V
V
DS
= - 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -10A
V
DS
= - 44V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -28V
I
D
= -10A
R
G
= 13
R
D
= 2.6
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.10
-4.0
–––
-25
-250
100
-100
35
7.9
16
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
620
280
140
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 3.6mH
R
G
= 25
, I
AS
= -10A. (See Figure 12)
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-14
-68
I
SD
≤
-10A, di/dt
≤
-290A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRF9Z34N data and test conditions
t=60s, =60Hz
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