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参数资料
| 型号： | IRFIB5N65A |
| 厂商： | International Rectifier |
| 英文描述： | N Channel SMPS MOSFET(N沟道开关模式电源MOS场效应管) |
| 中文描述： | ?频道开关电源MOSFET的（不适用沟道开关模式电源马鞍山场效应管） |
| 文件页数： | 8/8页 |
| 文件大小： | 103K |
| 代理商： | IRFIB5N65A |
IRFIB5N65A
8
www.irf.com
TO-220 Full-Pak Part Marking Information
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIM ENSIONING & TOLERANCING
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
M INIM UM CREEPAGE
DISTANCE BETW EEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
ASSEMBLY
LOT CODE
E401 9245
IRFI840G
EXAMPLE : THIS IS AN IRFI840G
W ITH ASSEMBLY
LOT CODE E401
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 24mH
R
G
= 25
, I
AS
= 5.2A. (See Figure 12)
I
SD
≤
5.2A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
t=60s, f=60Hz
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Data and specifications subject to change without notice. 6/00
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| IRFIB5N65APBF | 功能描述:MOSFET N-Chan 650V 5.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB6N60A | 功能描述:MOSFET N-Chan 600V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB6N60APBF | 功能描述:MOSFET N-Chan 600V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB7N50A | 功能描述:MOSFET N-Chan 500V 6.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB7N50APBF | 功能描述:MOSFET N-Chan 500V 6.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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