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参数资料
| 型号： | IRFIZ48 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 0.018ohm，身份证\u003d 37A条） |
| 文件页数： | 1/8页 |
| 文件大小： | 93K |
| 代理商： | IRFIZ48 |
IRFIZ48V
HEXFET
Power MOSFET
02/12/01
Parameter
Max.
39
27
290
43
0.29
± 20
72
15
5.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
3.5
65
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
www.irf.com
1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 39A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Description
TO-220 FULLPAK
PD-94072
相关PDF资料 |
PDF描述 |
|---|---|
| IRFIZ48G | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) |
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| IRFK6H150 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
| IRFK6H250 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
| IRFK6H350 | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFIZ48G | 功能描述:MOSFET N-Chan 60V 37 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIZ48G_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRFIZ48GPBF | 功能描述:MOSFET N-Chan 60V 37 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIZ48N | 功能描述:MOSFET N-CH 55V 36A TO220FP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFIZ48NPBF | 功能描述:MOSFET MOSFT 55V 36A 16mOhm 59.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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