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参数资料
| 型号： | IRFIZ48VPBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 103K |
| 代理商： | IRFIZ48VPBF |
IRFIZ48V
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 72A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 72A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
155
2.0
100
233
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
39
290
A
Starting T
J
= 25
°
C, L = 64μH
R
G
= 25
, I
AS
= 72A. (See Figure 12)
I
SD
≤
72A, di/dt
≤
151A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Pulse width
≤
300μs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Parameter
Min. Typ. Max. Units
60
–––
–––
0.064
–––
–––
–––
2.0
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.6
–––
200
–––
157
–––
166
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 43A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 43A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 72A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 72A
R
G
= 9.1
R
D
= 0.34
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
12.0
4.0
–––
25
250
100
-100
110
29
36
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1985
–––
496
91
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
E
as
Single Pulse Avalanche Energy
–––
780
170
mJ
I
AS
= 72A, L = 64mH
pF
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175
°
C .
Uses IRFZ48V data and test conditions.
t = 60s, f = 60Hz
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