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参数资料
| 型号： | IRFM220B |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 727K |
| 代理商： | IRFM220B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFM220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
1.13A, 200V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 10 pF)
Fast switching
Improved dv/dt capability
! "
!
!
S
!
"
"
D
G
SOT-223
IRFM Series
G
D
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFM220B
200
1.13
0.9
9.0
±
30
65
1.13
0.24
5.5
2.4
0.019
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
52
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFM220BTF | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFM220BTF_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFM224A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 920MA I(D) | SOT-223 |
| IRFM224B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFM224BTF_FP001 | 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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