收藏本站
参数资料
型号： IRFN340SMD
厂商： SEMELAB LTD
元件分类： JFETs
英文描述： N-CHANNEL POWER MOSFET
中文描述： 10 A, 400 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： HERMETIC SEALED, SMD1, 3 PIN
文件页数： 1/2页
文件大小： 23K
代理商： IRFN340SMD
IRFN340SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Energy
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
10A
6A
40A
125W
1.0W/°C
650mJ
10A
12.5mJ
4.0V/ns
–55 to 150°C
300°C
1.0°C/W
TBD
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1 PACKAGE
Pad 2 – Drain
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ V
DD
= 50V,Starting T
J
= 25°C, E
AS
=[0.5 * L* (I
L2
) * [BV
DSS
/(BV
DSS
-V
DD
)], Peak I
L
= 10A V
GS
= 10V,
2)
25
￡
R
G
￡
200
W
3) I
SD
￡
10A , di/dt
￡
120A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C
4) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
N–CHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
Pad 1 – Source
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
BV
DSS
I
D(cont)
R
DS(on)
400V
10A
0.55
W
相关PDF资料
PDF描述
IRFN9140SMD P-Channel Power MOSFET(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω))
IRFN9140 POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)
IRFN9140SMD ER 06 20 P/C
IRFN9240SMD P-Channel Power MOSFET(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)(P沟道功率MOS场效应管(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω))
IRFN9240 POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A)
相关代理商/技术参数
参数描述
IRFN350 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:hexfet 400V, 14A, 0.315 ohm 制造商:International Rectifier 功能描述:HEXFET, HiRel
IRFN3710 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)
IRFN440 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 8A 3SMD-1 - Bulk
IRFN450 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3SMD-1 - Bulk
IRFN5210 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:P-CHANNEL POWER MOSFET
发布紧急采购，3分钟左右您将得到回复。