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参数资料
型号： IRFP460
厂商： NXP SEMICONDUCTORS
元件分类： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封装： PLASTIC, TO-247, 3 PIN
文件页数： 2/7页
文件大小： 94K
代理商： IRFP460
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
IRFP460
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.5
K/W
SOT429 package, in free air
-
45
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 500 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 10 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 10 A
-
0.2
3.0
18
2
100
10
147
12
78
23
72
150
75
3.5
4.5
7.5
0.27
4.0
-
50
1000
200
190
18
100
-
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
2.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
I
D
= 20 A; V
DD
= 400 V; V
GS
= 10 V
V
DD
= 250 V; R
D
= 12
;
R
G
= 3.9
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
3000
480
270
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
20
A
T
mb
= 25C
-
-
80
A
I
S
= 20 A; V
GS
= 0 V
I
S
= 20 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.5
-
-
V
ns
μ
C
900
15
September 1999
2
Rev 1.000
相关PDF资料
PDF描述
IRFP460 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
IRFP460AS Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
IRFP460LC CABLE ASSEMBLY; MMCX PLUG TO SMA MALE; 50 OHM, RG188A/U COAX; 48" CABLE LENGTH
IRFP460 Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
IRFPC60LC-P TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC
相关代理商/技术参数
参数描述
IRFP460_R4943 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP460A 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP460A_R4944 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP460APBF 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP460APBF 制造商:International Rectifier 功能描述:MOSFET
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