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参数资料
| 型号： | IRFP460 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | PLASTIC, TO-247, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 94K |
| 代理商： | IRFP460 |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
IRFP460
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
PHW20N50E
0
1
2
3
4
5
6
7
8
9
10
12
14
0
25
50
75
100
125
150
175
200
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 20A
Tj = 25 C
VDD = 400 V
200V
300V
PHW20N50E
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
PHW20N50E
0
100
200
300
400
500
600
0
5
10
15
20
25
30
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
td(off)
tr, tf
td(on)
PHW20N50E
1
1E-06
10
100
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
125 C
VDS
ID
tp
Tj prior to avalanche = 25 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHW20N50E
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
September 1999
5
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| IRFP460 | 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
| IRFP460AS | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
| IRFP460LC | CABLE ASSEMBLY; MMCX PLUG TO SMA MALE; 50 OHM, RG188A/U COAX; 48" CABLE LENGTH |
| IRFP460 | Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
| IRFPC60LC-P | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFP460_R4943 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460A | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460A_R4944 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460APBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460APBF | 制造商:International Rectifier 功能描述:MOSFET |
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