- 您现在的位置：买卖IC网 > PDF目录360944 > IRFPC42 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.9A I(D) | TO-247AC PDF资料下载
参数资料
| 型号： | IRFPC42 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.9A I(D) | TO-247AC |
| 中文描述： | 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.9AI（四）|对247AC |
| 文件页数： | 1/8页 |
| 文件大小： | 107K |
| 代理商： | IRFPC42 |
IRFPC60LC-P
HEXFET
Power MOSFET
PD - 99438
S
D
G
V
DSS
= 600V
R
DS(on)
= 0.40
I
D
= 16A
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Absolute Maximum Ratings
Parameter
Max.
16
10
64
280
2.2
±30
1000
16
28
3.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°
C
225
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
Description
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs
achieve significantly lower gate charge over conventional MOSFETs. Utilizing
advanced Hexfet technology the device improvements allow for reduced gate
drive requirements, faster switching speeds and increased total system savings.
These device improvements combined with the proven ruggedness and reliability
of HEXFETs offer the designer a new standard in power transistors for switching
applications.
1
04/25/02
Surface Mountable
TO-247
相关PDF资料 |
PDF描述 |
|---|---|
| IRFPE32 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC |
| IRFPE42 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.8A I(D) | TO-247AC |
| IRFPE52 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7.2A I(D) | TO-247AC |
| IRFPF20 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.9A I(D) | TO-247AC |
| IRFPF22 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.8A I(D) | TO-247AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFPC42R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.9A I(D) | TO-247 |
| IRFPC48 | 功能描述:MOSFET N-CH 600V 8.9A TO-247AC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFPC50 | 功能描述:MOSFET N-Chan 600V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFPC50A | 功能描述:MOSFET N-Chan 600V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFPC50APBF | 功能描述:MOSFET N-Chan 600V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。