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参数资料
| 型号： | IRFR18N15 |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 10/10页 |
| 文件大小： | 126K |
| 代理商： | IRFR18N15 |
IRFR18N15D/IRFU18N15D
10
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 3.3mH
R
G
= 25
, I
AS
= 11A.
I
SD
≤
11A, di/dt
≤
170A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
WORLD HEADQUARTERS:
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IR SOUTHEAST ASIA:
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IR TAIWAN:
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Data and specifications subject to change without notice. 2/00
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
NO TES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR18N15D | 功能描述:MOSFET N-CH 150V 18A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR18N15DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 18A 3PIN DPAK - Bulk |
| IRFR18N15DPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR18N15DTR | 功能描述:MOSFET N-CH 150V 18A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR18N15DTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 18A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 18A 3PIN DPAK - Tape and Reel |
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