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参数资料
| 型号： | IRFU1N60A |
| 厂商： | International Rectifier |
| 英文描述： | ER 6C 6#16S PIN PLUG |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 1/10页 |
| 文件大小： | 181K |
| 代理商： | IRFU1N60A |
Parameter
Max.
1.4
0.89
5.6
36
0.28
± 30
3.8
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
MOSFET
HEXFET Power MOSFET
Rds(on) max
7.0
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
Power Factor Correction
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
600V
I
D
1.4A
Notes
www.irf.com
through
are on page 9
1
Low Power Single Transistor Flyback
D-Pak
IRFR1N60A
I-Pak
IRFU1N60A
IRFR1N60A
IRFU1N60A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU1N60APBF | 功能描述:MOSFET N-Chan 600V 1.4 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU210 | 功能描述:MOSFET N-Chan 200V 2.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU210A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.7A I(D) | TO-251AA |
| IRFU210B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| IRFU210BTLTU_FP001 | 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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