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参数资料
| 型号： | IRFU214 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件页数： | 1/6页 |
| 文件大小： | 52K |
| 代理商： | IRFU214 |
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR214, IRFU214
2.2A, 250V 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high-
power bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Features
2.2A, 250V
r
DS(ON)
= 2.000
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
High Input Impedance
150
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR214
TO-252AA
IRFR214
IRFU214
TO-251AA
IRFU214
NOTE:
When ordering, use the entire part number.
G
D
S
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3274.2
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PDF描述 |
|---|---|
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| IRFR21N60L | SMPS MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU214A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA |
| IRFU214B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFU214BTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFU214BTU_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU214PBF | 功能描述:MOSFET N-Chan 250V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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