参数资料
型号: IRFU214
厂商: INTERSIL CORP
元件分类: 功率晶体管
英文描述: 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
中文描述: 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件页数: 5/6页
文件大小: 52K
代理商: IRFU214
4-387
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-60 -40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
2.0
1.5
1.0
0.5
0
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5.6A
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GS
500
400
300
200
100
0
10
10
1
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
T
J
= 150
o
C
T
J
= 25
o
C
10
-1
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
S
,
10
0
10
1
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
I
D
= 2.7A
20
16
12
8
4
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFR214, IRFU214
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IRFU214A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
IRFU214B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFU214BTU 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFU214BTU_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFU214PBF 功能描述:MOSFET N-Chan 250V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube