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参数资料
| 型号： | IRFU1N60A |
| 厂商： | International Rectifier |
| 英文描述： | ER 6C 6#16S PIN PLUG |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 2/10页 |
| 文件大小： | 181K |
| 代理商： | IRFU1N60A |
2
www.irf.com
Parameter
Min. Typ. Max. Units
0.88
–––
–––
–––
–––
–––
–––
–––
–––
9.8
–––
14
–––
18
–––
20
–––
229
–––
32.6
–––
2.4
–––
320
–––
11.5
–––
130
Conditions
V
DS
= 50V, I
D
= 0.84A
I
D
= 1.4A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 1.4A
R
G
= 2.15
R
D
= 178
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
14
2.7
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
Parameter
Min. Typ. Max. Units
600
–––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 0.84A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
V
(BR)DSS
R
DS(on)
V
GS(th)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
7.0
4.0
25
250
100
-100
V
V
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
ns
Parameter
Typ.
–––
–––
–––
Max.
93
1.4
3.6
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.4A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
290
510
1.6
440
760
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
1.4
5.6
Parameter
Typ.
–––
–––
–––
Max.
3.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
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