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参数资料
| 型号： | IRFR214 |
| 厂商： | INTERSIL CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 3/6页 |
| 文件大小： | 52K |
| 代理商： | IRFR214 |
4-385
Internal Drain Inductance
L
D
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
-
-
5.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
110
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
-
-
2.2
A
Pulse Source to Drain Current
(Note 2)
I
SDM
-
-
8.8
A
Source to Drain Diode Voltage (Note 4)
V
SD
T
J
= 25
o
C, I
SD
= 2.2A, V
GS
= 0V(Figure 10)
T
J
= 25
o
C, I
SD
= 2.7A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 2.7A, dI
SD
/dt = 100A/
μ
s
-
-
2.0
V
Reverse Recovery Time
t
rr
97
-
390
ns
Reverse Recovery Charge
Q
RR
0.32
-
1.3
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 21mH, R
G
= 25
, peak I
AS
= 2.2A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
025
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
150
0.8
1.2
1.6
2.0
2.4
0.4
IRFR214, IRFU214
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR21496 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR214A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA |
| IRFR214B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFR214BTF | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFR214BTF_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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