参数资料
型号: IRFR3504PBF
厂商: International Rectifier
文件页数: 7/11页
文件大小: 0K
描述: MOSFET N-CH 40V 30A DPAK
标准包装: 600
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 30A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.2 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 71nC @ 10V
输入电容 (Ciss) @ Vds: 2150pF @ 25V
功率 - 最大: 140W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 管件
其它名称: *IRFR3504PBF
IRFR/U3504PbF
10000
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
10
1
0.1
0.01
0.05
0.10
assuming ? Tj = 25°C due to
avalanche losses
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
250
200
150
100
50
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 30A
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax . This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P D (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I av = Allowable avalanche current.
7. ? T = Allowable rise in junction temperature, not to exceed
0
25
50
75
100
125
150
175
T jmax (assumed as 25°C in Figure 15, 16).
t av = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
Z thJC (D, t av ) = Transient thermal resistance, see figure 11)
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
I av = 2 D T/ [1.3·BV·Z th ]
E AS (AR) = P D (ave) ·t av
7
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