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参数资料
| 型号： | IRFR3910 |
| 厂商： | International Rectifier |
| 英文描述： | RECT SCHOTTKY 60V 5A POWERMITE3 |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 100V的时，RDS \u003d 0.115ohm，身份证\u003d 16A条） |
| 文件页数： | 1/10页 |
| 文件大小： | 141K |
| 代理商： | IRFR3910 |
IRFR/U3910
HEXFET
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.115
I
D
= 16A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
5/11/98
Parameter
Max.
16
12
60
79
0.53
± 20
150
9.0
7.9
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
°C/W
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
l
Ultra Low On-Resistance
l
Surface Mount (IRFR3910)
l
Straight Lead (IRFU3910)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91364B
1
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PDF描述 |
|---|---|
| IRFU3910 | RECTIFIER SCHOTTKY SINGLE 5A 60V 100A-Ifsm 0.66Vf 0.2A-IR POWERMITE-3 5K/REEL |
| IRFRU5505 | 30V N-Channel PowerTrench MOSFET |
| IRFU5505 | 30V N-Channel PowerTrench MOSFET |
| IRFR5505 | P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
| IRFRU6215 | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR3910CPBF | 功能描述:MOSFET N-CH 100V 16A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR3910HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN DPAK - Rail/Tube |
| IRFR3910PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR3910TR | 制造商:IRF 制造商全称:International Rectifier 功能描述:Ultra Low On-Resistance |
| IRFR3910TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN DPAK - Tape and Reel |
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