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参数资料
| 型号： | IRFR420ATRR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 114K |
| 代理商： | IRFR420ATRR |
IRFR420A/IRFU420A
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V
,Source-to-Drain Voltage (V)
I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
10us
100us
1ms
10ms
0
4
8
12
16
0
5
10
15
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
2.5A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C,
Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR420B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| IRFR420BTF | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR420BTM | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR420BTMBLT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFR420BTMBLT_NBEA009 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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