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参数资料
| 型号： | IRFR420ATRR |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 8/10页 |
| 文件大小： | 114K |
| 代理商： | IRFR420ATRR |
IRFR420A/IRFU420A
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
-
Fig 14. For N-Channel HEXFET Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR420B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| IRFR420BTF | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR420BTM | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR420BTMBLT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFR420BTMBLT_NBEA009 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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