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参数资料
| 型号： | IRFR9024TRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 8.8A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 280 毫欧 @ 5.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
- 60
V GS = - 10 V
19
5.4
11
0.28
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFR9024, SiHFR9024)
? Straight Lead (IRFU9024, SiHFU9024)
? Available in Tape and Reel
Configuration
Single
S
?
?
?
P-Channel
Fast Switching
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DPAK
IPAK
(TO-252)
D
(TO-251)
G
DESCRIPTION
D
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
S
G
D S
D
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
P-Channel MOSFET
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR9024-GE3
IRFR9024PbF
SiHFR9024-E3
DPAK (TO-252)
SiHFR9024TR-GE3 a
IRFR9024TRPbF a
SiHFR9024T-E3 a
DPAK (TO-252)
SiHFR9024TRL-GE3 a
IRFR9024TRLPbF a
SiHFR9024TL-E3 a
DPAK (TO-252)
SiHFR9024TRR-GE3 a
IRFR9024TRRPbF a
SiHFR9024TR-E3 a
IPAK (TO-251)
SiHFU9024-GE3
IRFU9024PbF
SiHFU9024-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 60
± 20
UNIT
V
Continuous Drain Current
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
- 8.8
- 5.6
A
Pulsed Drain Current a
I DM
- 35
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.33
0.020
W/°C
Single Pulse Avalanche Energy b
E AS
300
mJ
Repetitive Avalanche
Current a
I AR
- 8.8
A
Repetitive Avalanche Energy a
E AR
5.0
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
42
2.5
- 4.5
- 55 to + 150
260
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = - 25 V, starting T J = 25 °C, L = 4.5 mH, R g = 25 ? , I AS = - 8.8 A (see fig. 12).
c. I SD ? - 11 A, dI/dt ? 140 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91278
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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