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参数资料
| 型号： | IRFR9110TRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 3.1A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 1.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 200pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
- 100
V GS = - 10 V
8.7
2.2
4.1
Single
S
1.2
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFR9110, SiHFR9110)
? Straight Lead (IRFU9110, SiHFU9110)
? Available in Tape and Reel
? P-Channel
? Fast Switching
?
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
D
D
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
S
G
D S
ruggedized device design, low on-resistance and
cost-effictiveness.
D
P-Channel MOSFET
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR9110-GE3
IRFR9110PbF
SiHFR9110-E3
DPAK (TO-252)
SiHFR9110TRL-GE3
IRFR9110TRLPbF a
SiHFR9110TL-E3 a
DPAK (TO-252)
SiHFR9110TR-GE3
IRFR9110TRPbF a
SiHFR9110T-E3 a
IPAK (TO-251)
SiHFU9110-GE3
IRFU9110PbF
SiHFU9110-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 100
± 20
UNIT
V
Continuous Drain Current
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
- 3.1
- 2.0
A
Pulsed Drain Current a
I DM
- 12
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.20
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
140
- 3.1
2.5
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
25
2.5
- 5.5
- 55 to + 150
260
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = - 25 V, starting T J = 25 °C, L = 21 mH, R g = 25 ? , I AS = - 3.1 A (see fig. 12).
c. I SD ? - 4.0 A, dI/dt ? 75 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91279
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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