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| 型号： | IRFR9110TRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 3.1A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 1.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 200pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
D.U.T.
Peak Dio d e Recovery d V/ d t Test Circuit
Circuit layout con s ideration s
? Low stray inductance
? G round plane
? Low leakage inductance
current tran s former
Vishay Siliconix
-
+
R g
? dV/dt controlled by R g
? I S D controlled by duty factor “D”
? D.U.T. - device under te s t
+
-
V DD
Note
? Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = - 10 V a
D.U.T. l S D waveform
Rever s e
recovery
Body diode forward
current
Re-applied
D.U.T. V D S waveform
current
dI/dt
Diode recovery
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = - 5 V for logic level and - 3 V drive device s
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91279 .
S13-0168-Rev. D, 04-Feb-13
7
Document Number: 91279
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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|---|---|
| IRFR9111 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 80V V(BR)DSS | 3.2A I(D) | TO-252 |
| IRFR9120 | 功能描述:MOSFET P-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9120_R4941 | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR91209A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-252AA |
| IRFR91209AR3603 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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