参数资料
型号: IRFR9110PBF
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 10/10页
文件大小: 1814K
代理商: IRFR9110PBF
10
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Data and specifications subject to change without notice.
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.
12/04
# $ "
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
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相关代理商/技术参数
参数描述
IRFR9110TF 制造商:International Rectifier 功能描述:
IRFR9110TM 制造商:Samsung Semiconductor 功能描述:
IRFR9110TR 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR9110TRA 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET
IRFR9110TRL 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube