- 您现在的位置：买卖IC网 > PDF目录384498 > IRFRU5505 (International Rectifier) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | IRFRU5505 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 2/10页 |
| 文件大小： | 108K |
| 代理商： | IRFRU5505 |
IRFR/U5505
Parameter
Min. Typ. Max. Units
-55
–––
––– -0.049 –––
–––
–––
-2.0
–––
4.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
28
–––
20
–––
16
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -9.6A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -9.6A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -9.6A
V
DS
= -44V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -28V
I
D
= -9.6A
R
G
= 2.6
R
D
= 2.8
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.11
-4.0
–––
-25
-250
-100
100
32
7.1
15
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
650
270
120
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -9.6A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
51
110
-1.6
77
160
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-18
-64
A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25°C, L = 3.2mH
R
G
= 25
, I
AS
= -9.6A. (See Figure 12)
I
SD
≤
-9.6A, di/dt
≤
290A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
S
D
G
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU5505 | 30V N-Channel PowerTrench MOSFET |
| IRFR5505 | P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
| IRFRU6215 | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| IRFU6215 | CAP 0.22UF 25V 10% X7R SMD-1206 TR-7-PL 3K/REEL |
| IRFR6215 | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFRU6215 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| IRFRU9024N | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) |
| IRFRU9120N | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) |
| IRFRU9214 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) |
| IRFRU9310 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
发布紧急采购，3分钟左右您将得到回复。