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参数资料
| 型号： | IRFRU6215 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d-为150V，的Rds（on）\u003d 0.295ohm，身份证\u003d- 13A条） |
| 文件页数： | 2/10页 |
| 文件大小： | 141K |
| 代理商： | IRFRU6215 |
IRFR/U6215
2
www.irf.com
Parameter
Min.
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
-0.20
–––
––– 0.295
–––
0.58
–––
-4.0
–––
–––
–––
-25
–––
-250
–––
100
–––
-100
–––
66
–––
8.1
–––
35
14
–––
36
–––
53
–––
37
–––
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -6.6A
V
GS
= -10V, I
D
= -6.6A
T
J
= 150°C
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -6.6A
V
DS
= -150V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -6.6A
V
DS
= -120V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -75V
I
D
= -6.6A
R
G
= 6.8
R
D
= 12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
860
220
130
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
–––
4.5 –––
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -6.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -6.6A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
160
1.2
-1.6
240
1.7
V
ns
μC
A
-13
-44
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 14mH
R
G
= 25
, I
AS
= -6.6A. (See Figure 12)
I
SD
≤
-6.6A, di/dt
≤
-620A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
Uses IRF6215 data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
S
D
G
S
D
G
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