参数资料
型号: IRFRU6215
厂商: International Rectifier
英文描述: Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)
中文描述: 功率MOSFET(减振钢板基本\u003d-为150V,的Rds(on)\u003d 0.295ohm,身份证\u003d- 13A条)
文件页数: 4/10页
文件大小: 141K
代理商: IRFRU6215
IRFR/U6215
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0
20
40
60
80
G
A
-
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -6.6A
V = -120V
V = -75V
V = -30V
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
T = 25°C
V = 0V
G S
S
A
-
-V , Source-to-Drain Voltage (V)
T = 175°C
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-
D
-V , Drain-to-Source Voltage (V)
10μs
100μs
1ms
T = 25°C
T = 175°C
Single Pulse
0
400
800
1200
1600
2000
1
10
100
C
A
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
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