参数资料
型号: IRFS41N15DTRR
厂商: International Rectifier
文件页数: 9/13页
文件大小: 0K
描述: MOSFET N-CH 150V 41A D2PAK
标准包装: 800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 41A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 110nC @ 10V
输入电容 (Ciss) @ Vds: 2520pF @ 25V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
IRFB/IRFIB/IRFS/IRFSL41N15D
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
?
3.40 (.133)
3.10 (.123)
-A-
4.80 (.189)
4.60 (.181)
2.80 (.110)
2.60 (.102)
3.70 (.145)
LEAD ASSIGNMENTS
3.20 (.126)
7.10 (.280)
6.70 (.263)
1 - GATE
2 - DRAIN
3 - SOURCE
16.00 (.630)
15.80 (.622)
1.15 (.045)
NOTES:
MIN.
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1
2
3
2 CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
D
0.44 (.017)
1.40 (.055)
3X
1.05 (.042)
2.54 (.100)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
M A M
B
0.48 (.019)
3X
2.85 (.112)
2.65 (.104)
A
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
2X
A-B-C-D = 4.80 (.189)
TO-220 Full-Pak Part Marking Information
Notes: This part marking information applies to all devices produced before 02/26/2001
and currently for parts manufactured in GB.
EXAMPLE: T HIS IS AN IRFI840G
WITH ASS EMBLY
LOT CODE E401
INT ERNATIONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
IRF I840G
E401
9245
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Notes : T his part marking information applies to devices produced after 02/26/2001 in
location other than GB.
EXAMPLE: THIS IS AN IRFI840G
WITH AS SEMBLY
LOT CODE 3432
AS SEMBLED ON WW 24 1999
IN THE AS SEMBLY LINE "K"
INTERNATIONAL
RECT IFIER
LOGO
IRFI840G
924K
34 32
PART NUMBER
DAT E CODE
www.irf.com
AS SEMBLY
LOT CODE
YEAR 9 = 1999
WEEK 24
LINE K
9
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