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参数资料
| 型号： | IRFS450A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Power MOSFET（500V，0.4Ω，9.6A）(N沟道功率MOS场效应管（漏源电压500V，导通电阻0.4Ω，漏电流9.6A）) |
| 中文描述： | 9.6 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PF, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 229K |
| 代理商： | IRFS450A |
IRFS450A
BV
DSS
= 500 V
R
DS(on)
= 0.4
I
D
= 9.6 A
500
9.6
6.1
56
±
30
1024
9.6
9.6
3.5
96
0.77
- 55 to +150
300
1.3
40
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 500V
Lower R
DS(ON)
: 0.308
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
1999 Fairchild Semiconductor Corporation
Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| IRFS450 | 500V N-Channel MOSFET |
| IRFS450B | 500V N-Channel MOSFET |
| IRFS460 | N-Channel Power MOSFET（500V，0.25Ω，12.4A）(N沟道功率MOS场效应管（漏源电压500V，导通电阻0.25Ω，漏电流12.4A）) |
| IRFS510 | Advanced Power MOSFET |
| IRFS510A | Advanced Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFS450B | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS451 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 9A I(D) | SOT-186VAR |
| IRFS4510PBF | 功能描述:MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS4510TRLPBF | 功能描述:MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS460 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 12.4A I(D) | TO-247VAR |
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