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参数资料
| 型号： | IRFS510 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先进的功率MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 253K |
| 代理商： | IRFS510 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.289 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
100
4.5
3.2
20
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
Ο
C
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
IRFS510A
BV
DSS
= 100 V
R
DS(on)
= 0.4
I
D
= 4.5 A
54
4.5
2.1
6.5
21
0.14
- 55 to +175
300
6.98
62.5
--
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| IRFS510A | Advanced Power MOSFET |
| IRFS520A | Advanced Power MOSFET |
| IRFS530 | Advanced Power MOSFET |
| IRFS530A | Advanced Power MOSFET |
| IRFS540A | Advanced Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFS510A | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS520 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186 |
| IRFS520A | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS521 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.2A I(D) | SOT-186 |
| IRFS52N15D | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
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