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参数资料
| 型号： | IRFU3411PBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 226K |
| 代理商： | IRFU3411PBF |
IRFR3411PbF
IRFU3411PbF
HEXFET
Power MOSFET
Parameter
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 100V
R
DS(on)
= 44m
I
D
= 32A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
32
23
110
130
0.83
± 20
16
13
7.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD - 95371A
D-Pak
IRFR3411
I-Pak
IRFU3411
相关PDF资料 |
PDF描述 |
|---|---|
| IRFR3412 | SMPS MOSFET |
| IRFU3412 | SMPS MOSFET |
| IRFR3418 | HEXFET Power MOSFET |
| IRFU3418 | HEXFET Power MOSFET |
| IRFR3505 | AUTOMOTIVE MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3412 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SMPS MOSFET |
| IRFU3412PBF | 功能描述:MOSFET N-CH 100V 48A I-PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3418 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3418PBF | 功能描述:MOSFET N-CH 80V 70A I-PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3504 | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
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