- 您现在的位置：买卖IC网 > PDF目录385445 > IRFU3412PBF (International Rectifier) SMPS MOSFET PDF资料下载
参数资料
| 型号： | IRFU3412PBF |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 2/10页 |
| 文件大小： | 235K |
| 代理商： | IRFU3412PBF |
2
www.irf.com
Parameter
Min. Typ. Max. Units
25
–––
––– 59 89
–––
21
–––
17
–––
19
–––
68
–––
44
–––
37
–––
3430 –––
–––
270
–––
150
–––
1040 –––
–––
170
–––
270
Conditions
V
DS
= 50V, I
D
= 29A
I
D
= 29A
V
DS
= 50V
V
GS
= 10V,
V
DD
= 50V
I
D
= 29A
R
G
= 6.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
32
26
–––
–––
–––
–––
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
160
29
14
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.10 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
3.5
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
100
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
––– 0.025
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 29A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 95V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
5.5
1.0
250
100
-100
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 0.38mH, R
G
= 25
,
I
AS
= 29A, (See Figure 12a)
I
SD
≤
29A, di/dt
≤
420A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Parameter
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU3418PbF | HEXFET Power MOSFET |
| IRFU3505PBF | HEXFET㈢ Power MOSFET |
| IRFU3704PbF | HEXFET Power MOSFET |
| IRFU9024NCPBF | HEXFET POWER MOSFET |
| IRFR9024NCPBF | HEXFET POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3418 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3418PBF | 功能描述:MOSFET N-CH 80V 70A I-PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3504 | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRFU3504PBF | 功能描述:MOSFET MOSFT 40V 87A 9.2mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU3504Z | 功能描述:MOSFET N-CH 40V 42A I-PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。