- 您现在的位置：买卖IC网 > PDF目录384497 > IRFU3710ZPbF (International Rectifier) AUTOMOTIVE MOSFET PDF资料下载
参数资料
| 型号： | IRFU3710ZPbF |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 7/11页 |
| 文件大小： | 285K |
| 代理商： | IRFU3710ZPBF |
www.irf.com
7
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 33A
相关PDF资料 |
PDF描述 |
|---|---|
| IRFR3711ZCPBF | HEXFET Power MOSFET |
| IRFU3711ZCPBF | HEXFET Power MOSFET |
| IRFR3911 | SMPS MOSFET |
| IRFU3911 | SMPS MOSFET |
| IRFR4105ZPBF | AUTOMOTIVE MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3710ZPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:140W |
| IRFU3711 | 功能描述:MOSFET N-CH 20V 100A I-PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3711PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU3711Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3711ZCPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。