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参数资料
| 型号： | IRFU9214 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d- 250V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 2.7A） |
| 文件页数： | 1/10页 |
| 文件大小： | 107K |
| 代理商： | IRFU9214 |
IRFR/U9214
HEXFET
Power MOSFET
PRELIMINARY
V
DSS
= -250V
R
DS(on)
= 3.0
I
D
= -2.7A
9/23/97
Parameter
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
P-Channel
l
Surface Mount (IRFR9214)
l
Straight Lead (IRFU9214)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
Parameter
Max.
-2.7
-1.7
-11
50
0.40
± 20
100
-2.7
5.0
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
260 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1658A
相关PDF资料 |
PDF描述 |
|---|---|
| IRFR9214 | P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) |
| IRFRU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFR9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFS11N50A | SMPS MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU9214N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-251AA |
| IRFU9214PBF | 功能描述:MOSFET P-Chan 250V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU9220 | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU9220PBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU9221 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3.6A I(D) | TO-251AA |
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