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参数资料
| 型号： | IRFR9310 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d-为400V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A） |
| 文件页数： | 1/10页 |
| 文件大小： | 116K |
| 代理商： | IRFR9310 |
IRFR/U9310
HEXFET
Power MOSFET
PRELIMINARY
7/30/97
Parameter
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
P-Channel
l
Surface Mount (IRFR9310)
l
Straight Lead (IRFU9310)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
Parameter
Max.
-1.8
-1.1
-7.2
50
0.40
± 20
92
-1.8
5.0
-24
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD 9.1663
S
D
G
V
DSS
= -400V
R
DS(on)
= 7.0
I
D
= -1.8A
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFS11N50A | SMPS MOSFET |
| IRFS31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A ) |
| IRFSL31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A ) |
| IRFS3207PBF | HEXFET㈢Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR9310PBF | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9310TR | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9310TRA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR9310TRL | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9310TRLA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
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