参数资料
型号: IRFU9220
厂商: HARRIS SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
中文描述: 3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件页数: 3/8页
文件大小: 99K
代理商: IRFU9220
4-91
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
P
T
C
, CASE TEMPERATURE (
o
C)
-2
-4
-1
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-3
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
10
0.1
1
Z
θ
J
,
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
-20
-10
-1
-0.1-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
μ
s
10ms
100ms
DC
V
DSS
MAX = -200V
1ms
-500
T
C
= 25
o
C
T
J
= MAX RATED
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-50
t, PULSE WIDTH (s)
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-1
I
I25
150
-------125
T
C
=
T
C
= 25
o
C
IRFR9220, IRFU9220
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