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参数资料
| 型号： | IRFU9220 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d-为200V，的Rds（on）\u003d 1.5ohm，身份证\u003d- 3.6A） |
| 文件页数： | 4/8页 |
| 文件大小： | 99K |
| 代理商： | IRFU9220 |
4-92
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-1
-2
-3
-4
V
GS
= -4.5V
-5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -20V
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-55
o
C
150
o
C
25
o
C
-2
-4
-8
-6
-6
-7
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.5
PULSE DURATION = 80
μ
s
V
GS
= -10V
I
D
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
IRFR9220, IRFU9220
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