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参数资料
| 型号： | IRFZ44NSTRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 49A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 49A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17.5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1470pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRFZ44NS/IRFZ44NL
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
–––
0.058
–––
V/ ° C Reference to 25 ° C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
17.5 m ?
V GS = 10V, I D = 25A
?
V GS(th)
Gate Threshold Voltage
2.0
–––
4.0 V V DS = V GS , I D = 250μA
g fs
Forward Transconductance
19
–––
–––
S V DS = 25V, I D = 25A ?
I DSS
I GSS
Q g
Q gs
Q gd
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25 V DS = 55V, V GS = 0V
μA
250 V DS = 44V, V GS = 0V, T J = 150 ° C
100 V GS = 20V
nA
-100 V GS = -20V
63 I D = 25A
14 nC V DS = 44V
23 V GS = 10V, See Fig. 6 and 13
t d(on)
Turn-On Delay Time
–––
12
–––
V DD = 28V
t r
t d(off)
Rise Time
Turn-Off Delay Time
–––
–––
60
44
–––
–––
ns
I D = 25A
R G = 12 ?
t f
L S
Fall Time
Internal Source Inductance
–––
–––
45
7.5
–––
–––
V GS = 10V, See Fig. 10 ?
nH Between lead,
and center of die contact
C iss
Input Capacitance
–––
1470 –––
V GS = 0V
C oss
Output Capacitance
–––
360
–––
V DS = 25V
C rss
Reverse Transfer Capacitance
–––
88
–––
pF
? = 1.0MHz, See Fig. 5
E AS
Single Pulse Avalanche Energy ?
–––
530 ? 150 ?
mJ I AS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
––– –––
––– –––
––– –––
MOSFET symbol
49
showing the
A
G
160
p-n junction diode.
1.3 V T J = 25 ° C, I S = 25A, V GS = 0V ?
D
S
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
63 95 ns T J = 25 ° C, I F = 25A
170 260 nC di/dt = 100A/μs ?
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
? Starting T J = 25 ° C, L = 0.48mH
R G = 25 ? , I AS = 25A. (See Figure 12)
? I SD ≤ 25A, di/dt ≤ 230A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175 ° C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175 ° C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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