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参数资料
| 型号： | IRG4MC50U |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-254AA |
| 中文描述： | 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 35A条一（c）|至254AA |
| 文件页数： | 1/8页 |
| 文件大小： | 141K |
| 代理商： | IRG4MC50U |
IRG4MC30F
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
V
CES
= 600V
V
CE(on) max
=1.7V
@V
GE
= 15V, I
C
= 15A
Parameter
Max.
600
28
15
112
112
± 20
75
30
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
A
V
W
-55 to + 150
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Absolute Maximum Ratings
12/18//01
www.irf.com
1
Fast Speed IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
°C/W
Test Conditions
1.67
PD -94313B
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PC50S-P | 600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 package |
| IRG4PC60F-P | 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package |
| IRG4PC60U-P | 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package |
| IRG4PH40S | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC |
| IRG4RC10STR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4MC50USCV | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk |
| IRG4MC50USCX | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk |
| IRG4MVC50U | 制造商:International Rectifier 功能描述: |
| IRG4P254S | 功能描述:IGBT STD 250V 98A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4P254SD | 制造商:International Rectifier 功能描述:250V 70.000A COPAK 247 / IGBT : JA / DIS |
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