- 您现在的位置：买卖IC网 > PDF目录377518 > IRG4PG40MD (International Rectifier) Fit Rate / Equivalent Device Hours PDF资料下载
参数资料
| 型号： | IRG4PG40MD |
| 厂商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小时 |
| 文件页数： | 7/35页 |
| 文件大小： | 112K |
| 代理商： | IRG4PG40MD |
第1页第2页第3页第4页第5页第6页当前第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
The IGBT Structure
IR
G
4
B
C
4
0
S
D
Diode
International Rectifier
Speed Designator
S Standard
F Fast
M Short Cicuit Fast
U UltraFast
K Short Circuit UltraFast
IGBT
Generation
Modifier
Die Size
Voltage Designator
C 600v E 800v
F 900v G 1000v
H 1200v
Package Designator
B T0220
P T0247
Basic IGBT Structure
The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the
terminal called Collector is, actually, the Emitter of the PNP. In spite of its
similarity to the cross-section of a power MOSFET, operating of the two
transistors is fundamentally different, the IGBT being a minority carrier device.
Except for the P + substrate is virtually identical to that of a power MOSFET,
both devices share a similar polysilicon gate structure and P wells with N +
source contacts. In both devices the N-type material under the P wells is sized
in thickness and reistivity to sustain the full voltage rating of the device.
However, in spite of the many similarities, he physical operation of the IGBT is
closer to that of a bipolar transistor than to that of a power MOSFET. This is
due to the P + substrate which is responsible for the minority carrier injection
into the N regtion and the resulting conductivity modulation, a significant share
of the conduction losses occur in the N region, typically 70% in a 500v device.
The part number itself contains in coded form the key features of the IGBT. An
explanation of the nomenclature in contained below.
IGBT / CoPack
Quarterly Reliability Report
Page 7 of 35
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PG40SD | Fit Rate / Equivalent Device Hours |
| IRG4PG40UD | Fit Rate / Equivalent Device Hours |
| IRG4PH40FD | Fit Rate / Equivalent Device Hours |
| IRG4PH40MD | Fit Rate / Equivalent Device Hours |
| IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PG40SD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PG40UD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PH20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
| IRG4PH20K | 功能描述:IGBT UFAST 1200V 11A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4PH20KD | 功能描述:IGBT W/DIODE 1200V 11A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。