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参数资料
| 型号： | IRG4PH40KD |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.47V，@和VGE \u003d 15V的，集成电路\u003d 15A条） |
| 文件页数： | 1/10页 |
| 文件大小： | 217K |
| 代理商： | IRG4PH40KD |
IRG4PH40KD
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor control,
t
sc
=10μs, V
CC
= 720V , T
J
= 125
°
C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Benefits
E
G
n-channel
C
V
CES
= 1200V
V
CE(on) typ.
=
2.74V
@V
GE
= 15V, I
C
= 15A
PD- 91577B
TO-247AC
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
30
15
60
60
8.0
130
10
± 20
160
65
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
2/7/2000
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
1.7
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
°
C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGPH40KD2 and IRGPH40MD2
products
For hints see design tip 97003
1
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| IRG4PH40KPBF | Short Circuit Rated UltraFast IGBT |
| IRG4PH40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE |
| IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| IRG4PH50KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40KD-E | 制造商:International Rectifier 功能描述:1200V 18.000A COPAK 247 / IGBT : JA / DI |
| IRG4PH40KDPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40K-E | 制造商:International Rectifier 功能描述:1200V 30.000A TO-247 / IGBT : JA / DISCR |
| IRG4PH40KPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40MD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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