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参数资料
| 型号： | IRG4PH40UDPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIDDE |
| 文件页数： | 6/11页 |
| 文件大小： | 679K |
| 代理商： | IRG4PH40UDPBF |
IRG4PH40UDPbF
6
www.irf.com
1
10
100
1000
1
10
100
1000
10000
V = 20V
T = 125 C
o
V , Collector-to-Emitter Voltage (V)
I
C
SAFE OPERATING AREA
Fig. 12
- Turn-Off SOA
Fig. 13
- Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 11 -
Typical Switching Losses vs.
Collector-to-Emitter Current
1
10
100
0
2
4
6
8
10
F
I
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
0
10
20
30
40
50
0
4
8
12
16
I , Collector-to-emitter Current (A)
T
R = Ohm
T = 150 C
V = 800V
V = 15V
°
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| IRG4PH50KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
| IRG4PH50 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
| IRG4PH50UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
| IRG4PH50UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH40U-E | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC |
| IRG4PH40UPBF | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH50 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
| IRG4PH50FD | 制造商:International Rectifier 功能描述:1200V 45.000A COPAK 247 / IGBT : JA / DI |
| IRG4PH50K | 制造商:International Rectifier 功能描述:IGBT TO-247 |
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