参数资料
型号: IRG4PH40UDPBF
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
中文描述: 绝缘栅双极型晶体管,超快软恢复DIDDE
文件页数: 7/11页
文件大小: 679K
代理商: IRG4PH40UDPBF
IRG4PH40UDPbF
www.irf.com
7
Fig. 14
- Typical Reverse Recovery vs. di
f
/dt
Fig. 15
- Typical Recovery Current vs. di
f
/dt
Fig. 16
- Typical Stored Charge vs. di
f
/dt
Fig. 17
- Typical di
(rec)M
/dt vs. di
f
/dt
0
100
200
300
400
500
600
100
1000
di /dt - (A/μs)
R
Q
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
10
100
1000
100
1000
di /dt - (A/μs)
d
IF
IF
IF
V = 200V
T = 125°C
T = 25°C
0
40
80
120
160
200
100
1000
dif
t
r
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
1
10
100
100
1000
di /dt - (A/μs)
I
I
IF
IF
IF
V = 200V
T = 125°C
T = 25°C
相关PDF资料
PDF描述
IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)
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IRG4PH50UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相关代理商/技术参数
参数描述
IRG4PH40U-E 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC
IRG4PH40UPBF 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRG4PH50 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
IRG4PH50FD 制造商:International Rectifier 功能描述:1200V 45.000A COPAK 247 / IGBT : JA / DI
IRG4PH50K 制造商:International Rectifier 功能描述:IGBT TO-247