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参数资料
型号： IRG4PH50U
厂商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
中文描述： 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.78V，@和VGE \u003d 15V的，集成电路\u003d 24A条）
文件页数： 2/8页
文件大小： 134K
代理商： IRG4PH50U
IRG4PH50U
2
www.irf.com
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
1200
—
18
—
—
1.20
—
2.56
—
2.78
—
3.20
—
2.54
3.0
—
—
-13
23
35
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
3.5
3.7
—
—
6.0
—
—
250
2.0
5000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 20A
I
C
= 24A V
GE
= 15V
I
C
= 45A
I
C
= 24A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100V, I
C
= 24A
V
GE
= 0V, V
CE
= 1200V
μA
V
GE
= 0V, V
CE
= 24V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Min. Typ. Max. Units
—
160
—
27
—
53
—
35
—
15
—
200
—
290
—
0.53
—
1.41
—
1.94
—
31
—
18
—
320
—
280
—
5.40
—
0.35
—
1.43
—
1.78
—
4.56
—
13
—
3600
—
160
—
31
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
250
40
83
—
—
350
500
—
—
2.6
—
—
—
—
—
—
—
2.9
—
—
—
—
—
I
C
= 24A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25
°
C
I
C
= 24A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 9, 10, 14
mJ
T
J
= 150
°
C
I
C
= 24A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 11, 14
T
J
= 25
°
C
,
V
GE
= 15V, R
G
= 5.0
I
C
= 20A, V
CC
= 960V
Energy losses include "tail"
See Fig. 9, 10, 11, 14, T
J
= 150
°
C
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
L
E
C
ies
C
oes
C
res
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nH
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
ns
mJ
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
,
(See fig. 13a)
V
CE(ON)
Collector-to-Emitter Saturation Voltage
mJ
ns
E
ts
Total Switching Loss
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