- 您现在的位置：买卖IC网 > PDF目录384501 > IRGI4061DPBF (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PDF资料下载
参数资料
| 型号： | IRGI4061DPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复DIODEINSULATED栅双极晶体管与超快软恢复二极管 |
| 文件页数： | 2/10页 |
| 文件大小： | 298K |
| 代理商： | IRGI4061DPBF |
IRGI4061DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
θ
!
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
Typ.
—
0.75
1.35
1.53
1.58
Max.
—
—
1.59
—
—
6.5
Units Conditions
V
V
GE
= 0V,I
c
=100 μA
V/°C
V
GE
= 0V, I
c
= 250 μA ( -55 -150
o
C )
I
C
= 11A, V
GE
= 15V, T
J
= 25°C
I
C
= 11A, V
GE
= 15V, T
J
= 125°C
I
C
= 11A, V
GE
= 15V, T
J
= 150°C
V
V
CE
= V
GE
, I
C
= 500 μA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA ( 25 -150
o
C )
S
V
CE
= 50V, I
C
= 11A, PW =80
μ
s
μA
V
GE
= 0V,V
CE
= 600V
μA
V
GE
= 0v, V
CE
= 600V, T
J
=150°C
V
I
F
= 11A
I
F
= 11A, T
J
= 150°C
nA
V
GE
= ± 20 V
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
-15
11
2.0
550
1.84
1.33
—
—
—
25
—
—
—
—
—
2.05
—
±100
V
FM
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
35
8.0
13
52
231
283
37
18
111
30
Max.
53
12
23
95
340
435
46
26
129
41
Units
I
C
= 11A
V
CC
= 400V
V
GE
= 15V
I
C
= 11A, V
CC
= 400V, V
GE
= 15V
R
G
= 22
, L=1mH, L
S
= 150nH, T
J
= 25°C
nC
μJ
Energy losses include tail and diode reverse recovery
I
C
= 11A, V
CC
= 400V
ns
R
G
= 22
, L=1mH, L
S
= 150nH
T
J
= 25°C
143
316
459
35
19
134
45
—
—
—
—
—
—
—
—
—
—
I
C
= 11A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 22
, L=1mH, L
S
= 150nH, T
J
= 150°C
Energy losses include tail and diode reverse recovery
I
C
= 11A, V
CC
= 400V
ns
R
G
= 22
, L=1mH, L
S
= 150nH
T
J
= 150°C
1050
89
30
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 150°C, I
C
= 40A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
R
G
= 22
, V
GE
= +15V to 0V
T
J
= 150
o
C
V
CC
= 400V, I
F
= 11A
V
GE
= 15V, Rg = 22
, L=1mH, L
S
=150nH
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Erec
Reverse recovery energy of the diode
Diode Reverse recovery time
—
—
—
211
60
—
—
—
μJ
ns
trr
Irr
Peak Reverse Recovery Current
18
A
μs
pF
Conditions
V
—
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuit Safe Operating Area
5
—
相关PDF资料 |
PDF描述 |
|---|---|
| IRGI4065PBF | PDP TRENCH IGBT |
| IRGI4085PBF | PDP TRENCH IGBT |
| IRGIB10B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB6B60KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB7B60KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGI4062DPBF | 功能描述:IGBT ISOLATED TO-220AB RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRGI4064DPBF | 功能描述:IGBT 600V 15A TO220 COPAK RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRGI4065PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 28A 3PIN TO-220AB FULLPAK - Bulk 制造商:International Rectifier 功能描述:IGBT 300V FULLPAK-220 |
| IRGI4085-111PBF | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGI4085PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 330V 28A 3PIN TO-220 - Bulk |
发布紧急采购，3分钟左右您将得到回复。