参数资料
型号: IRGPC20MD2
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A)
中文描述: 绝缘栅双极型晶体管,超快软恢复(VCES和\u003d 600V的,@和VGE \u003d 15V的,集成电路\u003d 8.0A)
文件页数: 2/8页
文件大小: 418K
代理商: IRGPC20MD2
C-382
IRGPC20MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Notes:
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
0.42
2.0
2.7
2.5
3.0
-11
2.7
3.8
1700
1.4
1.4
±100
Conditions
2.5
5.5
250
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 8.0A
I
C
= 13A
I
C
= 8.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 8.0A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 8.0A
I
C
= 8.0A, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
mV/°C
S
μA
V
FM
Diode Forward Voltage Drop
1.7
1.7
V
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
16
3.6
6.0
66
40
330
260
0.5
1.0
1.5
10
Conditions
24
5.2
9.0
540
480
2.5
I
C
= 8.0A
V
CC
= 400V
See Fig. 8
T
J
= 25°C
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
nC
ns
mJ
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 8.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
Pulse width 5.0μs,
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 50
, ( See fig. 19 )
65
46
520
560
2.3
13
365
47
4.8
37
55
3.5
4.5
65
124
240
210
55
90
5.0
8.0
138
360
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Pulse width
80μs; duty factor
0.1%.
single shot.
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