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参数资料
| 型号： | IRGPC20MD2 |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成电路\u003d 8.0A） |
| 文件页数： | 5/8页 |
| 文件大小： | 418K |
| 代理商： | IRGPC20MD2 |
C-385
IRGPC20MD2
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
1.56
1.58
1.60
1.62
1.64
0
10
20
30
40
50
60
T
W
R , Gate Resistance (
)
V = 480V
V = 15V
T = 25°C
I = 8.0A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
R = 50
V = 15V
V = 480V
I = 16A
I = 8.0A
I = 4.0A
A
0
200
400
600
1
10
100
V , Collector-to-Emitter Voltage (V)
C
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
4
8
12
16
20
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 8.0A
C
A
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